INSPECTION METHOD AND INSPECTION DEVICE BY CHARGED PARTICLE BEAM

摘要

PROBLEM TO BE SOLVED: To provide a charged particle beam application inspection device and an inspection method capable of realizing a charge control technology having more excellent uniformity than hitherto, and having excellent inspection accuracy and length measurement accuracy, concerning the inspection method and the device using the charged particle beam for defect inspection at an optional part on an unfinished semiconductor wafer in a semiconductor device manufacturing process. SOLUTION: The charge is homogenized in a wafer scale by operating coordinately ultraviolet light irradiation and voltage application to a charge control electrode. COPYRIGHT: (C)2005,JPO&NCIPI