SEMICONDUCTOR DEVICE HAVING SCHOTTKY BARRIER

摘要

PROBLEM TO BE SOLVED: To solve the problem that it is difficult to enhance the pressuretightness of a Shottky barrier diode while suppressing an increase in a decline in a forward direction voltage and an increase in a reverse recovery time. SOLUTION: A semiconductor board 10 having a N-type semiconductor area 14 and a cathode side N+-type semiconductor area 15 is provided. A plurality of inside P-type semiconductor areas 16 are formed in an area reserved for forming a first electrode 11, which functions as a Schottkey barrier electrode in the board 10. On the surrounding of the inside P-type semiconductor areas 16, outside P-type semiconductor areas 17a, 17b, 17c, which function as a guard ring, are formed. Anode side N+-type semiconductor areas 18 are arranged between respective inside P-type semiconductor areas 16. The first electrode 11 is set in ohmic contcat with the inside P-type semiconductor areas 16 and in Schottkey barrier contact with the anode side N+-type semiconductor areas 18. The impurity concentration and size of the inside P-type semiconductor areas 16 and of the N+-type semiconductor areas 18 are set properly so that a depletion layer spread through the inside of the inside P-type semiconductor areas 16. COPYRIGHT: (C)2005,JPO&NCIPI