摘要 |
PROBLEM TO BE SOLVED: To provide a method adjusting a magnetic memory cell write current to an optimum magnitude, and a magnetic memory cell array provided with such a adjuster. SOLUTION: Write current offset is summed to the magnetic memory cell write current, and whether a write error condition is caused is judged when writing to a magnetic memory cell with the modified magnetic memory cell write current. If the write error condition occurs, the magnetic memory cell write current is increased or decreased until the write error condition is eliminated. COPYRIGHT: (C)2005,JPO&NCIPI
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