发明名称 ADJUSTMENT OF A MAGNETIC MEMORY CELL WRITE CURRENT
摘要 PROBLEM TO BE SOLVED: To provide a method adjusting a magnetic memory cell write current to an optimum magnitude, and a magnetic memory cell array provided with such a adjuster. SOLUTION: Write current offset is summed to the magnetic memory cell write current, and whether a write error condition is caused is judged when writing to a magnetic memory cell with the modified magnetic memory cell write current. If the write error condition occurs, the magnetic memory cell write current is increased or decreased until the write error condition is eliminated. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005166249(A) 申请公布日期 2005.06.23
申请号 JP20040349800 申请日期 2004.12.02
申请人 HEWLETT-PACKARD DEVELOPMENT CO LP 发明人 PERNER FREDERICK A
分类号 G11C11/15;G11C11/16;H01L21/8246;H01L27/105;(IPC1-7):G11C11/15 主分类号 G11C11/15
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