| 摘要 |
PROBLEM TO BE SOLVED: To enable a front-end change of interconnections which causes no deterioration in device characteristics due to the implantation of Ga and to certainly ensure the performance as an interconnection at the time of changing the interconnections. SOLUTION: A portion which has no deterioration of device characteristics due to the implantation of Ga is processed by focusing ion beams 4 of high throughput, while a portion which has deterioration in device characteristics due to the implantation of Ga is processed by an SPM probe 5 or electron beams. Immediately after disconnecting or connecting an interconnection, electric characteristics of a portion wherein the interconnection has been changed are investigated by the conductive SPM probe 6 to check if the performance as a disconnection or interconnection is ensured. COPYRIGHT: (C)2005,JPO&NCIPI
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