| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device which uses a method for removing a hard mask without damaging a gate pattern formed on a semiconductor substrate. SOLUTION: In the manufacturing method of the semiconductor device, (1) multilayer films 3, 5, 7 and 9 for forming the gate pattern are formed on the semiconductor substrate 1, and (2) the hard mask 11 patterned in a prescribed shape is formed on the multilayer film. (3) The hard masks 11 are made as masks and the multilayer films 5, 7 and 9 are etched so as to form the gate pattern. (4) Protection materials 15 are buried in recessed parts formed by etching in such a way that surfaces of the hard masks 11 are exposed so that the side wall of the gate pattern is covered. (5) The hard masks 11 are removed. Since the side wall of the gate pattern is protected by the protection materials 15 before the hard masks 11 are removed, the hard masks 11 can be removed without damaging the gate pattern. COPYRIGHT: (C)2005,JPO&NCIPI
|
