| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming an oxide thin-film by a chemical vapor deposition method, in which a stepped coating rate can coexist with excellent electrical characteristics after an annealing, that is the high quantity of a polarization. SOLUTION: In the chemical vapor evaporation method forming the oxide thin-film, the chemical vapor deposition method contains a first oxide thin-film forming process forming the oxide thin-film at a first film-forming temperature and a second oxide thin-film forming process forming the oxide thin-film at a second film-forming temperature lower than the first film-forming temperature. In the method, the film thickness of the oxide thin-film formed in the first oxide film-forming process is thinner than that of the oxide thin-film formed in the second oxide-film forming process. COPYRIGHT: (C)2005,JPO&NCIPI
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