| 摘要 |
PROBLEM TO BE SOLVED: To provide a device having an STI structure with which a sufficient embedding characteristic can be obtained even if different STI widths coexist and shorting of a gate electrode can be prevented without a divot, and to provide a manufacturing method of the device. SOLUTION: A dielectric film formed of PSZ having high liquidity, for example, is embedded in an STI groove with a large aspect ratio by an STP method or an application method. Even if the STI grooves having the different STI widths coexist, an STI element separation structure is realized as parallel to a semiconductor substrate face. COPYRIGHT: (C)2005,JPO&NCIPI
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