| 发明名称 |
Method for fabricating semiconductor device |
| 摘要 |
A method for fabricating a semiconductor device comprises the steps of: forming interconnection grooves 38 in an inter-layer insulation film 34 ; forming an interconnection layer 44 of Cu as the main material in the interconnection grooves 38 ; and concurrently injecting nitrogen gas and water to the surface of the interconnection layer 44 buried in the interconnection groove 38.
|
| 申请公布号 |
US2005136661(A1) |
申请公布日期 |
2005.06.23 |
| 申请号 |
US20040816958 |
申请日期 |
2004.04.05 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
TAKIGAWA YUKIO;YAMAMOTO TAMOTSU;OKURA YOSHIYUKI;KONO TAKAHIRO;HOSODA TSUTOMU |
| 分类号 |
H01L21/3205;H01L21/44;H01L21/768;H01L23/52;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/3205 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
