发明名称 Apparatus for the prevention of arcing in a CVD-TiN chamber
摘要 A chemical vapor deposition apparatus for titanium-nitride application that is useful for preventing contaminants caused by arching between a substantially planar substrate and a substrate supporting apparatus during the deposition cycle. The apparatus includes a chemical vapor deposition chamber having a substrate-supporting heater. An annular housing supported by the heater, and a conductive strap that connectively secures the substrate-supporting heater to the annular housing by using holes instead of conventional slots. The conductive strap is designed as a flexure to flex with process temperature changes to improve electrical connectivity at its terminal connection and to prevent degradation. The annular housing has a top and a bottom surface and a cylindrical wall extending peripherally below the surfaces. The cylindrical wall encircles an isolator ring. The isolator ring is in contact with the bottom surface of the annular housing, and is placed and supported by at least three lift screws extending above the heater surface.
申请公布号 US2005133165(A1) 申请公布日期 2005.06.23
申请号 US20030744715 申请日期 2003.12.23
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO. 发明人 LIU KUANG-HSING;CHI PETER;HSUEH YO-CHENG;WU JASON;XIE JIANG-HE;CHANG JAKE;LIANG WEN-HSING;CHEN HUNG-CHENG;CHEN KUO-WEN;CHIU FENG-SHIH
分类号 C23C16/44;C23C16/458;C23F1/00;H01J37/32;(IPC1-7):C23F1/00 主分类号 C23C16/44
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