发明名称 PHOTORESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
摘要 <p>Disclosed is a photoresist composition which contains (A) a polymer component comprising an alkali-soluble constitutional unit having an alicyclic group which has both (i) a fluorine atom or a fluorinated alkyl group and (ii) an alcoholic hydroxyl group, which polymer component has an alkali solubility that is changed by action of an acid, and (B) at least one sulfonium compound represented by at least the general formula (1) below as an acid generator which generates an acid when exposed to light. (In the formula, X represents an alkylene group having 2-6 carbon atoms wherein at least one hydrogen atom is substituted by a fluorine atom; and R&lt;1&gt;-R&lt;3&gt; independently represent an aryl group or an alkyl group while at least one of R&lt;1&gt;-R&lt;3&gt; represents an aryl group.)</p>
申请公布号 WO2005057284(A1) 申请公布日期 2005.06.23
申请号 WO2004JP17719 申请日期 2004.11.29
申请人 TOKYO OHKA KOGYO CO., LTD.;TSUJI, HIROMITSU;ENDO, KOTARO 发明人 TSUJI, HIROMITSU;ENDO, KOTARO
分类号 G03F7/004;G03F7/039;H01L21/027;(IPC1-7):G03F7/004 主分类号 G03F7/004
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