MAGNETIC STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an MRAM having a sense amplifier in which hardly any sense current flows into an MTJ element and hardly any voltage is applied and a potential difference that appears on a bit line pair is amplified at a high speed.

SOLUTION: A sense amplifier 18 comprises cyclically connected CMOS inverters 20 and 22; a P channel MOS transistor TP1 which shuts off power supply during standby and N channel MOS transistors TN5 and TN6 which are used to initialize the outputs of the sense amplifier during standby. A ground terminal 204 of the inverter 20 is connected to a bit line BLT through a transistor TN3 of a bit switch 4 and a ground terminal 224 of the inverter 22 is connected to a bit line BLC through a transistor TN4 of the bit switch 4.

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