| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device capable of reducing faulty joint leakage current in a thin film transistor formed on the device, the semiconductor device, the manufacturing method of an electro-optical device, the electro-optical device and electronic equipment. SOLUTION: A substrate forming process for bonding a single crystal semiconductor layer 1a on a supporting substrate 10A wherein at least the surface thereof is provided with an insulating property, a thin film transistor forming process for forming the thin film transistor on the single crystal semiconductor layer 1a, and a hydrogenating treatment process for effecting heat treatment on the thin film transistor under a hydrogen atmosphere or reducing atmosphere including hydrogen are comprised. COPYRIGHT: (C)2005,JPO&NCIPI |
