发明名称 DRAWING METHOD OF CONTACT X-RAY LITHOGRAPHY
摘要 PROBLEM TO BE SOLVED: To realize high contrast drawing in a pattern drawing method of a close X-ray lithography, with which an intermittent parallel linear pattern where parallel lines in a regular interval (p) are periodically intermittent at every fixed interval is drawn. SOLUTION: (a) A thin film of resist (11) is formed on the surface of a substrate (6) serving as an object of exposure. (b) A mask for forming LS pattern, which has a pitch (2p) twice as much as a parallel line of the intermittent parallel linear pattern, is doubly exposed at two positions whose interval (1+2n)p ((n) is a "0" or positive integer.) is deviated in a space widthwise direction, and an LS pattern of one pitch (p) interval is formed in resist (11). (c) An unexposed continuous line of the LS pattern formed in resist (11) in the step (b) is parted and exposed by using a mask for forming spot pattern, in which a spot pattern is formed at a pitch of (1+m)p ((m) is an integer of one or above.) in the space width direction of the mask for forming LS pattern. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005166708(A) 申请公布日期 2005.06.23
申请号 JP20030399727 申请日期 2003.11.28
申请人 UNIV WASEDA 发明人 TOYODA EIJIRO;WASHIO MASAICHI
分类号 G03F7/20;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/20
代理机构 代理人
主权项
地址