| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of evaluating the characteristics which enables accurate calculation of a resistance value of an offset region of a semiconductor storage element which is so structured that the resistance value of the offset region located below a memory functional body may be changed depending on the amount of accumulated charges or polarized state of the memory functional body formed on one side or on both sides of a gate electrode. SOLUTION: The method of evaluating the characteristics of the semiconductor storage element comprises a process wherein a resistance value between two diffusion regions 212 and 213 which are arranged immediately below the gate electrode 217 of the semiconductor storage element via a gate insulation film 214, with a channel region in between, a resistance value of the channel region, and resistance values of the diffusion regions 212 and 213 are found separately; and a process wherein, on the basis of a calculation result obtained by subtracting the resistance value of the channel region and the resistance values of the diffusion regions 212 and 213 from the resistance value between the two diffusion regions, the resistance value of the offset region 271 for separating the channel region and the diffusion regions 212 and 213 is calculated. COPYRIGHT: (C)2005,JPO&NCIPI
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