发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit whose power consumption is lower than a conventional case. SOLUTION: Respective conductor circuits are divided into regions in accordance with operation probability per unit time of each semiconductor circuit. Controls of power voltage Vdd and threshold voltage Vt are associatively performed by individual divided regions 2-1. A control target value of threshold voltage Vt is determined according to operation probability of semiconductor circuit 3. A Vt control circuit 4 controls substrate voltage Vbp and Vbn of p-type and n-type MOS transistors in the semiconductor circuit 3, so that threshold voltage Vt is fixed to the target value irrespective of temperature fluctuation at the time of use. A Vdd control circuit 5 controls power voltage Vdd to the semiconductor circuit 3 so that a target operation frequency is filled. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005166698(A) |
申请公布日期 |
2005.06.23 |
申请号 |
JP20030399522 |
申请日期 |
2003.11.28 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
SAKIYAMA SHIRO;KINOSHITA MASAYOSHI;SUMIDA MASAYA |
分类号 |
H01L21/822;H01L21/8234;H01L27/04;H01L27/088;H03K5/00;H03K5/13;H03K19/00;H03K19/094;(IPC1-7):H01L21/822;H01L21/823 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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