发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit whose power consumption is lower than a conventional case. SOLUTION: Respective conductor circuits are divided into regions in accordance with operation probability per unit time of each semiconductor circuit. Controls of power voltage Vdd and threshold voltage Vt are associatively performed by individual divided regions 2-1. A control target value of threshold voltage Vt is determined according to operation probability of semiconductor circuit 3. A Vt control circuit 4 controls substrate voltage Vbp and Vbn of p-type and n-type MOS transistors in the semiconductor circuit 3, so that threshold voltage Vt is fixed to the target value irrespective of temperature fluctuation at the time of use. A Vdd control circuit 5 controls power voltage Vdd to the semiconductor circuit 3 so that a target operation frequency is filled. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005166698(A) 申请公布日期 2005.06.23
申请号 JP20030399522 申请日期 2003.11.28
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SAKIYAMA SHIRO;KINOSHITA MASAYOSHI;SUMIDA MASAYA
分类号 H01L21/822;H01L21/8234;H01L27/04;H01L27/088;H03K5/00;H03K5/13;H03K19/00;H03K19/094;(IPC1-7):H01L21/822;H01L21/823 主分类号 H01L21/822
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