| 摘要 |
The present invention discloses a non-volatile ferroelectric memory device having a sensing voltage control circuit. The non-volatile ferroelectric memory device having a sensing voltage control circuit comprises: a plurality of cell array blocks having a hierarchy bit line architecture having main bit lines and sub bit lines; a plurality of sense amplifier units sensing a voltage on the main bit line according to a sensing detection threshold voltage, and adjusting a level of the sensing detection threshold voltage according to a temperature; a data bus transferring a read/write data; and a main amplifier amplifying the read data, and outputting the amplified read data. Therefore, the FeRAM of the present invention enables a stable data sensing by compensating through the sense amplifier the signal transfer characteristics of the main bit line according to the temperature change.
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