发明名称 |
NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
In a nitride semiconductor LED having a light emitting structure, an n-doped semiconductor layer has a first region and a second region surrounding the first region, an active layer is formed on the second region of the n-doped semiconductor layer, and a p-doped nitride semiconductor layer is formed on the active layer. A p-electrode is formed on the p-doped semiconductor layer. An n-electrode is formed on the first region of the n-doped nitride semiconductor layer. |
申请公布号 |
KR20050061743(A) |
申请公布日期 |
2005.06.23 |
申请号 |
KR20030093091 |
申请日期 |
2003.12.18 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
PARK, YOUNG HO;CHO, HYO KYOUNG;YOO, SEUNG JIN;KO, KUN YOO |
分类号 |
H01L29/06;H01L33/32;H01L33/38;H01L33/42;H01L33/62 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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