| 发明名称 |
Ruthenium silicide wet etch |
| 摘要 |
A method of removing ruthenium silicide from a substrate surface which comprises exposing the ruthenium silicide surface to a solution containing chlorine and fluorine containing chemicals. In particular, said solution is designed to react with said ruthenium silicide film such that water-soluble reaction products are formed. |
| 申请公布号 |
US6908569(B2) |
申请公布日期 |
2005.06.21 |
| 申请号 |
US20030421976 |
申请日期 |
2003.04.23 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
KRAUS BRENDA D.;ANDREAS MICHAEL T. |
| 分类号 |
C23F1/30;A62C2/00;A62D1/00;B44C1/22;C09K13/00;C09K13/04;C09K13/08;H01L;H01L21/02;H01L21/28;H01L21/302;H01L21/306;H01L21/3205;H01L21/3213;H01L21/461;H01L21/8242;H01L23/52;H01L27/108;(IPC1-7):C09K13/00 |
主分类号 |
C23F1/30 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
