发明名称 Analysis methods of leakage current luminescence in CMOS circuits
摘要 Disclosed are a method and system for analyzing leakage current luminescence in CMOS circuits. The method comprises the steps of collecting light emission data from each of a plurality of CMOS circuits, and separating the CMOS circuits into first and second groups. For the first group of CMOS circuits, the emission data from the CMOS circuits are analyzed, based on the presence or absence of leakage light from the CMOS circuits, to identify logic states for the CMOS circuits. For the second group of CMOS circuits, the emission data from the CMOS circuits are analyzed, based on modulation of the intensity of the light from the CMOS circuits, to determine values for given parameters of the circuits. These parameters may be, for example, temperature, cross-talk or power distribution noise.
申请公布号 US6909295(B2) 申请公布日期 2005.06.21
申请号 US20030669305 申请日期 2003.09.24
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 POLONSKY STANISLAV V.;WEGER ALAN J.;MC MANUS MOYRA K.
分类号 G01R31/02;G01R31/26;(IPC1-7):G01R31/303;G06F19/00;H01L21/00 主分类号 G01R31/02
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