METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR WAFER AND COMPOUND SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a compound semiconductor wafer for the use in HBT production, in which a sub- collector layer, a collector layer, a base layer and an emitter layer are vapor-deposited in this order on a compound semiconductor substrate through an MOCVD method; wherein the base layer is a p-type compound semiconductor thin film layer containing at least one of Ga, Al and In as a Group III element and As as a Group V element under the condition that the growth is the Group V gas flow-rate supply rate-determining growth.