发明名称 |
Dual work function semiconductor structure with borderless contact and method of fabricating the same |
摘要 |
A dual work function semiconductor structure with borderless contact and method of fabricating the same are presented. The structure may include a field effect transistor (FET) having a substantially cap-free gate and a conductive contact to a diffusion adjacent to the cap-free gate, wherein the conductive contact is borderless to the gate. Because the structure is a dual work function structure, the conductive contact is allowed to extend over the cap-free gate without being electrically connected thereto.
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申请公布号 |
US6908815(B2) |
申请公布日期 |
2005.06.21 |
申请号 |
US20030624781 |
申请日期 |
2003.07.22 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
YE QIUYI;TONTI WILLIAM R.;LI YUJUN |
分类号 |
H01L21/28;H01L21/60;H01L21/768;H01L21/8234;H01L21/8238;H01L21/8242;H01L23/522;H01L27/088;H01L27/092;H01L27/108;H01L29/423;H01L29/43;H01L29/49;(IPC1-7):H01L21/336;H01L21/824 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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