发明名称 |
Method of fabricating flat-cell mask read-only memory devices |
摘要 |
According to embodiments of the invention, a first gate insulating pattern and a mask pattern are sequentially stacked on a semiconductor substrate. Subsequently an impurity region is formed in the semiconductor substrate. Next, the mask pattern is removed to expose the first gate insulating pattern and a second gate insulating layer is formed on the entire surface thereof. The mask pattern is preferably formed of an anti-reflecting pattern and a photoresist pattern that are sequentially stacked. The anti-reflecting pattern is preferably formed of a material layer without etching selectivity with respect to the photoresist pattern. For this, the anti-reflecting pattern is preferably formed of organic materials including hydrocarbonic compounds. In addition, removing a mask pattern is performed with an etch recipe having an etch selectivity with respect to the first gate insulating pattern.
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申请公布号 |
US6908819(B2) |
申请公布日期 |
2005.06.21 |
申请号 |
US20030360881 |
申请日期 |
2003.02.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE HEE-JUENG;KO MYUNG-HO |
分类号 |
H01L21/762;H01L21/8246;H01L27/112;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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