| 发明名称 |
Complete device layer transfer without edge exclusion via direct wafer bonding and constrained bond-strengthening process |
| 摘要 |
More complete bonding of wafers may be achieved out to the edge regions of the wafer by constrained bond strengthening of the wafers in a pressure bonding apparatus after direct wafer bonding. The pressure bonding process may be accompanied by the application of not above room temperature.
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| 申请公布号 |
US6908027(B2) |
申请公布日期 |
2005.06.21 |
| 申请号 |
US20030403458 |
申请日期 |
2003.03.31 |
| 申请人 |
INTEL CORPORATION |
发明人 |
TOLCHINSKY PETER;SHAHEEN MOHAMAD;LEI RYAN;YABLOK IRWIN |
| 分类号 |
B23K20/02;H01L21/00;H01L21/18;H01L21/762;(IPC1-7):B23K31/02 |
主分类号 |
B23K20/02 |
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