| 摘要 |
A method of fabricating a semiconductor device capable of relaxing pattern dependency in a planarization step is obtained. This method of fabricating a semiconductor device comprises steps of filling up an opening with a filler while forming the filler on the opening and on a non-opening part, forming a mask layer at least on a part of the filler located on the opening, etching a region, formed with no mask layer, of a part of the filler located on the non-opening part by a prescribed thickness through a mask of the mask layer, and thereafter scraping the upper surface of the filler located on the opening and on the non-opening part thereby performing surface planarization. Thus, the width of the upper surface of the part of the filler located on the non-opening part having a large height is reduced. Therefore, the part having a large height is so readily removed that the planarized surface can be prevented from dispersion.
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