SEMICONDUCTOR DEVICE HAVING MULTI-LAYERED GATE DIELECTRIC LAYER AND FABRICATION METHOD THEREOF,申请号KR20030091571-传众专利搜索

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发明名称	SEMICONDUCTOR DEVICE HAVING MULTI-LAYERED GATE DIELECTRIC LAYER AND FABRICATION METHOD THEREOF
摘要
申请公布号	KR20050059854(A)	申请公布日期	2005.06.21
申请号	KR20030091571	申请日期	2003.12.15
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	JUNG, HYUNG SUK;LEE, JONG HO;DOH, SEOK JOO;KIM, YUN SEOK
分类号	H01L21/336;(IPC1-7):H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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