| 摘要 |
A single transistor ("1T") ferroelectric memory cell, device and method for the formation of the same incorporating a high temperature ferroelectric gate dielectric. The memory cell of the present invention comprises a substrate, an overlying ferroelectric layer, which may comprise a film of rare earth manganite, and an interfacial oxide layer intermediate the substrate and the ferroelectric layer. In a preferred embodiment, the ferroelectric material utilized in an implementation of the present invention may be deposited by metallorganic chemical vapor deposition ("MOCVD") or other techniques and exhibits a low relative dielectric permittivity of around 10 and forms an interfacial layer with a relative dielectric permittivity larger than that of SiO<SUB>2</SUB>, which makes it particularly suitable for a 1T cell.
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