Method and related circuit for accessing locations of a ferroelectric memory

摘要

A method and circuit for accessing a memory location comprising at least one respective ferroelectric storage unit of a matrix of ferroelectric storage units, the memory location is selected by connecting a first terminal of a ferroelectric storage element of the at least one respective storage unit to a respective access line to the memory location; at least another memory location to which is not intended to be accessed is also selected. A second terminal of the ferroelectric storage element is biased to a prescribed access electric potential, and an electric potential on the access line is sensed; the second terminal of the ferroelectric storage elements of the other memory location is also biased to the access potential.