发明名称 Semiconductor light-receiving module capable of converting light into current efficiently at light absorbing layer
摘要 A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequentially on the substrate, a light incident facet formed at least at one facet of the substrate and the light absorbing layer, and electrodes which output an electric signal generated by absorption of the light entering from the light incident facet in the light absorbing layer. The incident light direction device directs to irradiate the light obliquely to the light incident facet of the semiconductor light-receiving element, and to cause at least part of the light to irradiate the light absorbing layer at the light incident facet.
申请公布号 US6909160(B2) 申请公布日期 2005.06.21
申请号 US20030618424 申请日期 2003.07.11
申请人 ANRITSU CORPORATION 发明人 KAWANO KENJI;YOSHIDAYA HIROAKI;HIRAOKA JUN;SASAKI YUICHI;KAWAZURA EIJI;MATSUMOTO SATOSHI
分类号 G02B6/12;G02B6/42;H01L31/0232;(IPC1-7):H01L31/023 主分类号 G02B6/12
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