发明名称 Semiconductor device production method and semiconductor device
摘要 A semiconductor device production method is provided, which comprises the steps of: (a) forming an insulative film on an underlying substrate; (b) forming a semiconductor layer on the insulative film; (c) bonding a flexible substrate onto the semiconductor layer; and (d) separating the semiconductor layer on the flexible substrate from the insulative film on the underlying substrate.
申请公布号 US6908834(B2) 申请公布日期 2005.06.21
申请号 US20030635645 申请日期 2003.08.07
申请人 SHARP KABUSHIKI KAISHA 发明人 TOKUSHIGE NOBUAKI
分类号 H01L21/20;H01L21/02;H01L21/336;H01L21/68;H01L21/762;H01L27/04;H01L27/12;H01L29/786;(IPC1-7):H01L21/20;H01L29/06 主分类号 H01L21/20
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