| 摘要 |
FIELD: metallurgy; methods of production of trichloresilane. ^ SUBSTANCE: the invention is pertaining to the field of metallurgy, in particular to methods of production of trichloresilane and may be used in production of semiconductor silicon. The technical silicon is loaded in the reactor and exposed to hydrochlorination using synthetic hydrogen chloride in a boiling layer. Produced trichlorosilane is commixed with a noble gas, condensed in the refrigeration chambers, the produced condensate with the noble gas is aged and a stage by stage purified from impurities in the refrigeration columns. The synthetic hydrogen chloride used for hydrochlorination is mixed with the steam-refined hydrogen chloride produced from -grade hydrochloric acid in the ratio of (5-1) : 1. The stage by stage purification of the condensate is conducted in two rectifying columns: in the first column the light fraction is separated, a partially purified product is fed into the second column for separation of the heavy fraction. At that the ratio of amounts of the separated light and heavy fractions makes 1 : (2.6-8.0). The technical result is simplification of the production process, extension of the raw-material base and reduction of expenditures for trichlorosilane production. ^ EFFECT: the invention ensures simplification of the production process, extension of the raw-material base and reduction of expenditures for trichlorosilane production. ^ 2 cl |
