| 摘要 |
An amplification type solid-state image pickup device has a plurality of pixels each of which comprises a photodiode 4 , a signal-amplification-use MOS transistor 1 for amplifying signal charges stored in the photodiode 4 , a reset-use MOS transistor 2 for resetting signal charges stored in the photodiode 4 , and a pixel-selection-use MOS transistor 3 for selecting a signal amplified by the signal-amplification-use MOS transistor 1 . During a first period, a reset drain voltage VP(i) is turned and held in a Low state. During second and third periods thereof, the reset drain voltage VP(i) is changed to a High state. A reset gate voltage RS(i) is set to a first voltage (V<SUB>DD</SUB>-DeltaV) during the first and second periods, and the reset gate voltage RS(i) is set to a second voltage V<SUB>DD </SUB>higher than the first voltage by a specified voltage DeltaV during the third period. |
