| 摘要 |
Objectives) To provide a method for separating a layer without causing damage to the separated layer. With this method, not only a layer having a small area but also one having a large area can be wholly separated at high yield. Lightweight semiconductor devices in which layers to be separated are adhered to various substrates and a method for manufacturing such semiconductor devices. Especially, lightweight semiconductor devices wherein various devices (such as a thin film diode, a photoelectric transducer composed of a PIN junction of silicon, and a silicon resistor device) among which a TFT is the typical, are adhered to flexible films, and a method for manufacturing such devices. (Solution) A metal layer (11) is formed on a substrate; an oxide layer (12) is formed on the metal layer (11); and a layer to be separated (13) is formed thereon. By irradiating the metal layer (11) with a laser light, oxidation is caused thereby forming a metal oxide layer (16). Consequently, complete separation can be achieved at somewhere inside the metal oxide layer (16) or at the interface between the metal oxide layer (16) and the oxide layer (12) through a physical means. |
