发明名称 METHOD AND SYSTEM FOR COMPENSATING FOR ANNEAL NON-UNIFORMITIES
摘要 A method and system can compensate for anneal non-uniformities by implanting dopant in a pattern to provide higher dopant concentrations where the anneal non-uniformities result in lower active dopant concentrations. A pattern for the anneal non- uniformities may be determined by annealing a wafer having a uniform dopant distribution and measuring properties of the wafer after annealing, e.g., by obtaining a sheet resistance map of the wafer. In one embodiment, the non-uniformities may be measured by measuring temperature variations during annealing.
申请公布号 KR20050059255(A) 申请公布日期 2005.06.17
申请号 KR20057006331 申请日期 2003.09.18
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 RENAU ANTHONY
分类号 H01L21/265;H01L21/266;H01L21/324;H01L21/66;(IPC1-7):H01L21/324 主分类号 H01L21/265
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