发明名称 |
METHOD AND SYSTEM FOR COMPENSATING FOR ANNEAL NON-UNIFORMITIES |
摘要 |
A method and system can compensate for anneal non-uniformities by implanting dopant in a pattern to provide higher dopant concentrations where the anneal non-uniformities result in lower active dopant concentrations. A pattern for the anneal non- uniformities may be determined by annealing a wafer having a uniform dopant distribution and measuring properties of the wafer after annealing, e.g., by obtaining a sheet resistance map of the wafer. In one embodiment, the non-uniformities may be measured by measuring temperature variations during annealing.
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申请公布号 |
KR20050059255(A) |
申请公布日期 |
2005.06.17 |
申请号 |
KR20057006331 |
申请日期 |
2003.09.18 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
RENAU ANTHONY |
分类号 |
H01L21/265;H01L21/266;H01L21/324;H01L21/66;(IPC1-7):H01L21/324 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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