Method of Solidification for Amorphous Silicon layer using a Sequential Lateral Solidification Crystallization Technology,申请号KR20020073554-传众专利搜索

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发明名称	Method of Solidification for Amorphous Silicon layer using a Sequential Lateral Solidification Crystallization Technology
摘要
申请公布号	KR100496251(B1)	申请公布日期	2005.06.17
申请号	KR20020073554	申请日期	2002.11.25
申请人		发明人
分类号	H01L21/20;C30B13/00;H01L21/336;H01L29/786;(IPC1-7):H01L21/20	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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