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发明名称
发光二极体结构
摘要
本发明系揭露一种发光二极体结构,其系在一基板上磊晶形成一缓冲层后,续于该缓冲层上形成一第一半导体层、活化层及第二半导体层,其中上述层与层之间更可形成一吸收层,该吸收层可吸收层与层之间因为不同材质特性结合所产生的机械应力,使其后续之磊晶过程具有较完美之晶体结构,更进一步达成提升元件发光效率、亮度与使用寿命等功效。
申请公布号
TW200520248
申请公布日期
2005.06.16
申请号
TW092133771
申请日期
2003.12.02
申请人
威凯科技股份有限公司
发明人
寺一高;徐顺弘
分类号
H01L33/00
主分类号
H01L33/00
代理机构
代理人
蔡秀玫
主权项
地址
新竹市新竹科学工业园区工业东四路34号2楼
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