| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a capacitor and a method for manufacturing the capacitor, a semiconductor device including the capacitor, and a method for manufacturing the semiconductor device. <P>SOLUTION: The capacitor includes a storage electrode on an outer wall of which a storage conductive film and a storage conductive film pattern are formed and comprising a compensation member for compensating the loss of the storage electrode, a dielectric film formed on the storage electrode, and a plate electrode formed on the dielectric film. During an etching process for forming the storage electrode via the compensation member, particularly the loss of the upper part of the storage electrode can be compensated, therefore, the structural stability of the storage electrode can be prevented from deteriorating. Further, since the compensation material is provided on an outer upper part of the storage electrode, a storage electrode having a proper thickness can be formed, therefore, it is possible to improve the electric characteristics of the capacitor. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
