METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To enable the microfabrication of a semiconductor device, and to achieve stable memory cell characteristics. SOLUTION: A method of manufacturing a semiconductor device comprises processes of forming a trap film 102 on a semiconductor substrate 101; forming a hard mask 103 having a composition different from that of the trap film near the surface thereof on the trap film; selectively removing at least part of the hard mask 103 with a photo resist 104 as a mask; removing the photo resist; forming a diffusion layer 105 of a conductivity type opposite from that of the semiconductor substrate in the semiconductor substrate by ion implantation using the hard mask; removing the hard mask; and after washing the surface of the semiconductor substrate using a chemical, oxidizing at least part of the surface of the diffusion layer by heat treatment in an atmosphere containing oxygen, and activating the diffusion layer. COPYRIGHT: (C)2005,JPO&NCIPI