| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor in which the reliability of a device is enhanced, and to provide its manufacturing method. SOLUTION: A field effect transistor 1 comprises a channel layer 10 which is provided on a semi-insulating GaAs substrate 3 and has an In<SB>x</SB>Ga<SB>1-x</SB>P layer 9 and a GaAs layer 11, an Al<SB>y</SB>Ga<SB>1-y</SB>As cap layer 13 provided on the channel layer 10, and alloyed areas 27, 29 provided in the Al<SB>y</SB>Ga<SB>1-y</SB>As cap layer 13 in an n<SP>+</SP>area 25 (source area) and an n<SP>+</SP>area 23 (drain area). Here, as the alloyed areas 27, 29 are provided above the In<SB>x</SB>Ga<SB>1-x</SB>P layer 9, they are not within the In<SB>x</SB>Ga<SB>1-x</SB>P layer 9. For this reason, an aging change of a contact specific resistance R<SB>c</SB>is small in the field effect transistor 1. COPYRIGHT: (C)2005,JPO&NCIPI
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