发明名称 |
Structure and method for fabricating a bond pad structure |
摘要 |
A structure and method for an improved a bond pad structure. We provide a top wiring layer and a top dielectric (IMD) layer over a semiconductor structure. The buffer dielectric layer is formed over the top wiring layer and the top dielectric (IMD) layer. We form a buffer opening in the buffer dielectric layer exposing at least of portion of the top wiring layer. We form a barrier layer over the buffer dielectric layer, and the top wiring layer in the buffer opening. A conductive buffer layer is formed over the barrier layer. We planarize the conductive buffer layer to form a buffer pad in the buffer opening. We form a passivation layer over the buffer pad and the buffer dielectric layer. We form a bond pad opening in the passivation layer over at least a portion of the buffer pad. We form a bond pad support layer over the buffer pad and the buffer dielectric layer. We form a bond pad layer over the a bond pad support layer. The bond pad layer and the bond pad support layer are patterned to form a bond pad and bond pad support.
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申请公布号 |
US2005127530(A1) |
申请公布日期 |
2005.06.16 |
申请号 |
US20030735117 |
申请日期 |
2003.12.13 |
申请人 |
FAN ZHANG;CHAO ZHANG B.;WUPING LIU;LIEP CHOK K.;CHOO HSIA L.;KHENG LIM Y.;CUTHBERTSON ALAN;BOOM TAN J. |
发明人 |
FAN ZHANG;CHAO ZHANG B.;WUPING LIU;LIEP CHOK K.;CHOO HSIA L.;KHENG LIM Y.;CUTHBERTSON ALAN;BOOM TAN J. |
分类号 |
H01L21/60;H01L23/485;H01L23/532;H01L29/40;(IPC1-7):H01L29/40 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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