发明名称 |
FIELD EFFECT TRANSISTOR, PARTICULARLY VERTICAL FIELD EFFECT TRANSISTOR, MEMORY CELL, AND PRODUCTION METHOD |
摘要 |
Disclosed is a field effect transistor (37), among other things, which comprises a monocrystalline control area (34). The inventive field effect transistor (37) provides a certain degree of freedom concerning the circuitry design and can be produced in a simple manner. |
申请公布号 |
WO2005038922(A3) |
申请公布日期 |
2005.06.16 |
申请号 |
WO2004EP52216 |
申请日期 |
2004.09.16 |
申请人 |
INFINEON TECHNOLOGIES AG;TEWS, HELMUT |
发明人 |
TEWS, HELMUT |
分类号 |
H01L21/8242;H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|