| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress increase in the resistance of a strap contact accompanying scaling-down. <P>SOLUTION: The semiconductor memory device comprises a trench provided in a semiconductor substrate; a diffusion layer for first electrode, provided in the semiconductor substrate in contact with the inner surface of the trench; a capacitor insulating film provided on the inner surface of the trench to cover the diffusion layer; a conductive layer for second electrode provided on the capacitor insulating film for embedding the lower side part of the trench; a first insulating film provided on the inner surface of the trench above the conductive layer, a first conductive layer provided on the first insulating film and the conductive layer for embedding the intermediate part of the trench; a first contact layer provided on the first insulating film and the first conductive layer for embedding the upper side part of the trench; and a second contact layer, provided on the surface of the semiconductor substrate in contact with the first contact layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
