| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce a bad influence of threshold fluctuation of a driving TFT. <P>SOLUTION: A selection TFT 20 and a correction TFT 22 (22-1, 22-2) are on, and data voltage of a data line is held at a holding capacity 28 as a gate voltage of a driving TFT 24. After the selection TFT 20 is off, the voltage of a holding capacity line SC is brought down, the driving TFT 24 is on, and the driving current flows to an organic EL element 26. The correction TFT 22 is on before the holding capacity line SC is brought down, and it is off in the course of the bringing down. The capacity value of the correction TFT 22 changes while the gate voltage is bringing down, the inclination of the bringing down of the gate voltage of the driving TFT 24 changes, and the gate voltage after the holding capacity line SC is brought down is set corresponding to the threshold change of the driving TFT24. A multi-gate correction TFT 22-1 and -2 are provided between the gate of the selection TFT 20 and the driving TFT 24, and the leak current of the correction TFT 20 is prevented in the course of the change of the gate voltage of the driving TFT. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
