| 摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive, high-speed, high-density, and low-power storage device. SOLUTION: The storage device includes first semiconductor layers (122, 222 and 322) having p dopants, second semiconductor layers (124, 224, 324 and 424) which are disposed on the first semiconductor layers and have n dopants, and junctions (128, 228 and 328) formed between the first and second semiconductor layers. The storage device further comprises charge trapping structures (140, 240, 340, 440, 440', 540 and 640) disposed on the second semiconductor layers and conductive gates (150, 250, 350 and 650). The conductive gates and the charge trapping structures move with respect to one another, and an electric field applied over the second semiconductor layers and the conductive gates captures charge in the charge trapping structures. COPYRIGHT: (C)2005,JPO&NCIPI |
