| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-performance FET that has a relative dielectric constant lower than that of oxicide silicon, and whose gate capacity (parasitic capacity) is low due to the use of an inter-lamination insulation film that uses an insulating film excellent in transient property. SOLUTION: A photo-resist mask is used to form a source electrode 107 and a drain electrode 108 made of an AuGe/Ni series through a vapor disposition and liftoff technology onto an ohmic contact layer n-GaAs 106 composing a GaAs epitaxial substrate 101, and then, the photo-resist mask is used to etch the n-GaAs 106 of the predetermined region by phosphoric acid and citric acid and then to form a gate electrode made of a Ti/Al series at the same region through the vapor disposition and liftoff technology. After that, a carbon nitride 110 is formed at the front of the substrate by using the sputtering technique, benzocyclobutene is formed onto the carbon nitride through spin coating, and then, a flattened interlayer insulation film 111 is formed through thermal treatment. COPYRIGHT: (C)2005,JPO&NCIPI
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