COMPOUND SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, OPTICAL TRANSMISSION SYSTEM, AND OPTICAL DISK DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent missing of P when growth on a group III-V compound semiconductor layer containing P is carried out again. SOLUTION: On an InGaAsP etching-stop layer 18 containing P, a GaAs semiconductor (low-temperature grown) layer 21 of 10% to 0% in group III mixed crystal ratio of Al is grown again at 550 to 600°C. Consequently, missing of P from the InGaAsP etching stop layer 18 can be suppressed. a shift in grating constant and roughening of a surface that the InGaAsP etching stop layer 18 has are therefore prevented and deterioration in crystallinity of a p-type GaAlAs 3rd clad layer 22 which is grown again is prevented to prevent a resistance increase of a current channel nearby a regrowth boundary surface. COPYRIGHT: (C)2005,JPO&NCIPI