FORMING METHOD FOR SILICON OXYNITRIDE FILM

摘要

PROBLEM TO BE SOLVED: To provide a more efficient forming method for a silicon oxynitride film by exploiting respective characteristics of thermal reaction method and plasma excitation method, and further carrying out thermal decomposition of N2O gas before irradiating the substrate therewith. SOLUTION: Only N2O gas is used as a reactant gas, and the plasma excitation for promoting the nitriding reaction of N2O gas and the thermal excitation for promoting the oxidizing reaction of N2O gas are controlled independently. The surface of a sample substrate is simultaneously exposed to the reactant gas processed according to respective excitation methods to form the silicon oxynitride film. COPYRIGHT: (C)2005,JPO&NCIPI