| 摘要 |
The invention relates to a transistor having an emitter ( 1 ), a collector ( 2 ), and a base layer ( 3 ), wherein the emitter ( 1 ) extends into the base layer ( 3 ), wherein the base layer ( 3 ) has an intrinsic region ( 4 ) arranged between the emitter ( 1 ) and the collector ( 2 ), and an extrinsic region ( 6 ) that runs between the intrinsic region ( 4 ) and a base contact ( 5 ), wherein the base layer ( 3 ) contains a first doping layer ( 7 ) doped with a trivalent doping substance, which extends into the extrinsic region ( 6 ) and which is counter-doped by means of a pentavalent counter-doping substance ( 8 ) in the region of the emitter ( 1 ). The electrical resistance of the base layer ( 3 ) can be reduced, in advantageous manner, by means of the first doping layer ( 7 ).
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