发明名称 |
A METAL LAYER OF SEMICONDUCTOR DEVICE, AND A METHOD THEREOF |
摘要 |
<p>Metal interconnection lines of semiconductor devices and methods of forming the same are disclosed. Improved reliability is achieved in a disclosed metal line of a semiconductor device by preventing metal layers from eroding and preventing metal lines from being destroyed due to electro-migration (EM) and stress-migration (SM). An illustrated metal interconnection line includes: a semiconductor substrate; a metal pattern on the substrate; a glue pattern under the metal pattern; an anti-reflection pattern on the metal pattern; and dummy patterns surrounding side walls of the metal pattern.</p> |
申请公布号 |
KR20050058079(A) |
申请公布日期 |
2005.06.16 |
申请号 |
KR20030090328 |
申请日期 |
2003.12.11 |
申请人 |
DONGBUANAM SEMICONDUCTOR INC. |
发明人 |
LEE, JAE SUK |
分类号 |
H01L21/28;H01L21/4763;H01L21/768;H01L23/48;H01L23/532;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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