发明名称 |
TANTALUM SPUTTERING TARGET AND METHOD FOR PREPARATION THEREOF |
摘要 |
A tantalum spattering target which has a crystal structure wherein the (222) orientation is preferred toward the central face thereof from the position of 10 % of the thickness thereof; and a method for preparing the tantalum spattering target which comprises providing a tantalum ingot or billet formed by melting and casting, and subjecting the tantalum ingot or billet to forging and recrystallization annealing, followed by rolling, to form a crystal structure wherein the (222) orientation is preferred toward the central face of the ingot or billet from the position of 10 % of the thickness thereof. The spattering target allows the formation of a film exhibiting good uniformity and thus having improved quality. |
申请公布号 |
KR20050057382(A) |
申请公布日期 |
2005.06.16 |
申请号 |
KR20057004544 |
申请日期 |
2005.03.17 |
申请人 |
NIKKO MATERIALS COMPANY, LIMITED |
发明人 |
ODA KUNIHIRO |
分类号 |
B21J1/02;C22F1/00;C22F1/18;C23C14/34;(IPC1-7):C23C14/34 |
主分类号 |
B21J1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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