发明名称 METHOD OF TREATING SUBSTRATE AND CHEMICAL USED THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a method of treating substrate by which a process of working an organic film pattern into a new pattern form can be performed smoothly by performing second developing treatment. SOLUTION: In the method of treating substrate, pretreatment performed for removing a damaged layer formed on the surface of the organic film pattern and the second developing treatment performed for contracting at least part of the organic film pattern or removing part of the pattern are performed in this order. Since the developing treatment is performed after the damaged layer is removed by the pretreatment, the second developing treatment can be performed smoothly and highly uniformly. Therefore, the working of a base film into a pattern performed after the developing treatment can be performed highly uniformly. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005159294(A) 申请公布日期 2005.06.16
申请号 JP20040230717 申请日期 2004.08.06
申请人 NEC KAGOSHIMA LTD 发明人 KIDO SHUSAKU
分类号 G02F1/1333;G03F7/20;G03F7/26;H01L21/00;H01L21/027;H01L21/312;H01L21/32;H01L51/40;(IPC1-7):H01L21/027;G02F1/133 主分类号 G02F1/1333
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